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Structural, optical and electrical studies on Mg-doped NiO thin films for sensitivity applications

Identifieur interne : 000097 ( Main/Exploration ); précédent : 000096; suivant : 000098

Structural, optical and electrical studies on Mg-doped NiO thin films for sensitivity applications

Auteurs : M. Ben Amor [Tunisie] ; A. Boukhachem [Tunisie] ; K. Boubaker [Tunisie] ; M. Amlouk [Tunisie]

Source :

RBID : Pascal:14-0278054

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English descriptors

Abstract

Magnesium-doped nickel oxide (NiO:Mg) thin films have been prepared by the spray pyrolysis technique on glass substrates at 450 °C using NiCl2.4H2O and MgCl2 6H2O (ACROS pure more than 99.0%) as precursor in the starting solution with ratio [Ni]/[Mg]= 0%, 1%, 2% and 3%. X-ray analysis shows that NiO:Mg thin films crystallize in a cubic structure with a preferred orientation of the crystallites along (111) direction. The surface topography of these films was performed by the atomic force microscopy. Optical measurements show that the band gap energies of the films vary with magnesium concentration from 3.56 eV to 3.62 eV. The effect of the magnesium incorporation in NiO matrix on the disorder is studied in terms of Urbach energy. Finally, the electric conductivity of the prepared thin films was investigated using an impedance spectroscopy technique in the frequency range 5 Hz-13 MHz at various temperatures (300-500 °C). The variation of the conductivity in terms of the temperature shows an electrical behavior with Mg-doping. The activation energy Ea was found lying in (0.30-0.43 eV) domain. AC conductivity of NiO:Mg thin films is investigated through Jonsher law. The maximum barrier high is Wm=2.72 eV. From the power exponent variation in terms of the [Mg]/[Ni] ratio, it is found that the mechanism of conduction matches well the correlated barrier hopping CBH model.


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<term>Activation energy</term>
<term>Atomic force microscopy</term>
<term>Crystallites</term>
<term>Cubic lattices</term>
<term>Doped materials</term>
<term>Doping</term>
<term>Electrical characteristic</term>
<term>Electrical conductivity</term>
<term>Electrical impedance</term>
<term>Electrical measurement</term>
<term>Energy gap</term>
<term>Glass</term>
<term>Hopping conduction</term>
<term>Magnesium</term>
<term>Magnesium addition</term>
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<term>Nickel</term>
<term>Nickel oxide</term>
<term>Optical measurement</term>
<term>Preferred orientation</term>
<term>Spectrometry</term>
<term>Spray coating</term>
<term>Spray pyrolysis</term>
<term>Surface conditions</term>
<term>Surface topography</term>
<term>Thin film</term>
<term>Urbach rule</term>
<term>X ray analysis</term>
<term>X ray diffraction</term>
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<term>Matériau dopé</term>
<term>Dopage</term>
<term>Addition magnésium</term>
<term>Dépôt projection</term>
<term>Diffraction RX</term>
<term>Analyse RX</term>
<term>Orientation préférentielle</term>
<term>Cristallite</term>
<term>Topographie surface</term>
<term>Etat surface</term>
<term>Microscopie force atomique</term>
<term>Mesure optique</term>
<term>Bande interdite</term>
<term>Règle Urbach</term>
<term>Conductivité électrique</term>
<term>Mesure électrique</term>
<term>Spectrométrie</term>
<term>Impédance électrique</term>
<term>Caractéristique électrique</term>
<term>Energie activation</term>
<term>Conduction saut</term>
<term>Couche mince</term>
<term>Oxyde de magnésium</term>
<term>Oxyde de nickel</term>
<term>Verre</term>
<term>Nickel</term>
<term>Réseau cubique</term>
<term>Magnésium</term>
<term>8105K</term>
<term>6146</term>
<term>6837P</term>
<term>7363</term>
<term>MgO</term>
<term>Pyrolyse par projection</term>
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<term>Dopage</term>
<term>Spectrométrie</term>
<term>Verre</term>
<term>Nickel</term>
<term>Magnésium</term>
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<front>
<div type="abstract" xml:lang="en">Magnesium-doped nickel oxide (NiO:Mg) thin films have been prepared by the spray pyrolysis technique on glass substrates at 450 °C using NiCl
<sub>2</sub>
.4H
<sub>2</sub>
O and MgCl
<sub>2</sub>
6H
<sub>2</sub>
O (ACROS pure more than 99.0%) as precursor in the starting solution with ratio [Ni]/[Mg]= 0%, 1%, 2% and 3%. X-ray analysis shows that NiO:Mg thin films crystallize in a cubic structure with a preferred orientation of the crystallites along (111) direction. The surface topography of these films was performed by the atomic force microscopy. Optical measurements show that the band gap energies of the films vary with magnesium concentration from 3.56 eV to 3.62 eV. The effect of the magnesium incorporation in NiO matrix on the disorder is studied in terms of Urbach energy. Finally, the electric conductivity of the prepared thin films was investigated using an impedance spectroscopy technique in the frequency range 5 Hz-13 MHz at various temperatures (300-500 °C). The variation of the conductivity in terms of the temperature shows an electrical behavior with Mg-doping. The activation energy E
<sub>a</sub>
was found lying in (0.30-0.43 eV) domain. AC conductivity of NiO:Mg thin films is investigated through Jonsher law. The maximum barrier high is W
<sub>m</sub>
=2.72 eV. From the power exponent variation in terms of the [Mg]/[Ni] ratio, it is found that the mechanism of conduction matches well the correlated barrier hopping CBH model.</div>
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